SUP90P06-09L-E3【PDF 1/7 页】MOSFET P-CH 60V 90A TO220AB

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SUP90P06-09L

Vishay Siliconix

P-Channel 60 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

V DS (V) R DS(on) ( ? )

0.0093 at V GS = - 10 V

- 60

0.0118 at V GS = - 4.5 V

I D (A) c

- 90

FEATURES

? TrenchFET ? Power MOSFET

? Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

RoHS

COMPLIANT

? DC/DC Primary Switch

TO-220AB

Drain connected to Tab

G D S

Top View

Ordering Information: SUP90P06-09L-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)

P-Channel MOSFET

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V DS

V GS

Limit

- 60

± 20

Unit

Single Pulse Avalanche Energy

Continuous Drain Current (T J = 175 °C) c

Pulsed Drain Current

Avalanche Current

Power Dissipation

Operating Junction and Storage Temperature Range

T C = 25 °C

T C = 125 °C

L = 0.1 mH

T C = 25 °C

T A = 25 °C

I D

I DM

I AS

E AS

P D

T J , T stg

- 90

- 67

- 200

- 65

211

250 b

2.4

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient Free Air

Junction-to-Case

Symbol

R thJA

R thJC

Limit

0.6

Unit

°C/W

Notes:

a. Duty cycle ? 1 %.

b. See SOA curve for voltage derating.

c. Limited by package.

Document Number: 73010

S10-2545-Rev. B, 08-Nov-10

www.vishay.com

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